A Non-Linear Description of the Bias Dependent Parasitic Resistances of Quarter Micron MOSFETs
نویسندگان
چکیده
A new model description for source and drain resistances of LDD devices is proposed. It includes the dependence on the gate, bulk and drain bias. Measurements on a 0.25μm gate length device show excellent agreement with circuit simulation.
منابع مشابه
An analytical source-and-drain series resistance model of quarter micron MOSFETs and its influence on circuit simulation
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